SI4948B

SI4948B


Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Supply Voltage VDD 2.7 5.5 V Operating supply voltage range
Gate-Source Voltage VGS -0.5 5.5 V Maximum gate-source voltage
Continuous Drain Current ID 30 40 A Continuous drain current
Peak Pulsed Drain Current IPD 60 A Peak pulsed drain current
RDS(on) RDS(on) 4.5 8.5 m惟 On-state resistance
Junction Temperature Tj -40 150 掳C Operating junction temperature range
Storage Temperature Tstg -55 150 掳C Storage temperature range

Instructions for Use:

  1. Power Supply: Ensure the supply voltage (VDD) is within the specified range of 2.7V to 5.5V.
  2. Gate Drive: Apply a gate-source voltage (VGS) not exceeding 5.5V to avoid damaging the device.
  3. Current Handling: Operate within the continuous drain current (ID) limits, up to 30A typical and 40A maximum. For peak conditions, do not exceed 60A pulsed current.
  4. Thermal Management: Keep the junction temperature (Tj) between -40掳C and 150掳C to ensure reliable operation. Monitor and manage heat dissipation to prevent overheating.
  5. Storage Conditions: Store the device in an environment where temperatures range from -55掳C to 150掳C.
  6. Handling Precautions: Handle with care to prevent electrostatic discharge (ESD) damage. Use appropriate ESD protection measures during installation and handling.
(For reference only)

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