Details

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BUY 2SA968B https://www.utsource.net/itm/p/12610833.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	60	V
Emitter-Collector Voltage	VECE	-	-	60	V
Base-Emitter Voltage	VBE	-	-	6	V
Collector Current	IC	-	-	3	A
Base Current	IB	-	-	0.3	A
Power Dissipation	PD	-	-	65	W
Junction Temperature	TJ	-40	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance (J-C)	RthJC	-	1.5	-	掳C/W

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings specified in the table.
   • Use appropriate heat sinks to manage thermal resistance and ensure the junction temperature does not exceed 150掳C.

2. Mounting:

   • Ensure proper alignment of the pins to avoid mechanical stress.
   • Apply thermal paste between the transistor and heat sink for efficient heat dissipation.

3. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly.
   • Use suitable wire gauges to handle the current levels.

4. Biasing:

   • Ensure the base-emitter voltage (VBE) is within the specified range to prevent damage.
   • Use a current-limiting resistor for the base to control the base current (IB).

5. Testing:

   • Test the transistor under controlled conditions to verify its performance.
   • Monitor the temperature and current to ensure they remain within safe limits.

6. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight.
   • Handle with care to avoid static discharge, which can damage the device.

(For reference only)