Details

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BUY MJD50 https://www.utsource.net/itm/p/12610848.html

Parameter	Value	Unit
Type	NPN Power Transistor
Collector-Emitter Voltage (Vce)	100	V
Emitter-Base Voltage (Veb)	5	V
Collector Current (Ic)	15	A
Power Dissipation (Ptot)	130	W
Operating Temperature (Tamb)	-65 to +150	掳C
Storage Temperature (Tstg)	-65 to +150	掳C
Junction Temperature (Tj)	-65 to +150	掳C
Transition Frequency (ft)	4.5	MHz
Package Type	TO-220

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within safe limits.
   • Use thermal compound between the transistor and heat sink for better heat transfer.

2. Biasing:

   • Apply base current (Ib) sufficient to ensure the transistor operates in saturation mode when fully on.
   • Calculate Ib using the formula: Ib = Ic / hFE, where hFE is the current gain (typically 10-70 for MJD50).

3. Protection:

   • Use a fast-acting fuse in series with the collector to protect against overcurrent conditions.
   • Consider adding a flyback diode across inductive loads to suppress voltage spikes.

4. Handling:

   • Handle with care to avoid mechanical damage.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to prevent moisture damage.

(For reference only)