Details

---

BUY MJD210 https://www.utsource.net/itm/p/12610850.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	80	V
Collector-Base Voltage	VCBO	90	V
Emitter-Base Voltage	VEBO	5	V
Continuous Collector Current	IC	15	A
Peak Collector Current	IC(peak)	30	A
Power Dissipation	PT	65	W
Junction Temperature	TJ	-55 to 150	掳C
Storage Temperature	TSTG	-65 to 150	掳C

Instructions for Using MJD210:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

2. Biasing:

   • Use a suitable base resistor to limit the base current and prevent damage to the transistor.
   • Ensure the base-emitter voltage (V_BE) is within safe limits, typically around 0.7V for silicon transistors.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Monitor the junction temperature to ensure it stays within the specified range to avoid thermal runaway.

4. Storage:

   • Store the transistor in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid mechanical stress which can lead to internal damage.

5. Testing:

   • Use a multimeter to check for continuity and resistance values to verify the transistor is functioning correctly.
   • Perform a simple test circuit to ensure the transistor operates as expected under load conditions.

(For reference only)