2SK369-BL

2SK369-BL


Specifications
Details

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Parameter Symbol Conditions Min Typ Max Unit
Drain-source on-state resistance Rds(on) Vgs = 10V, Id = 5A - 0.025 -
Gate-source threshold voltage Vgs(th) Id = 1mA 1.0 1.5 2.0 V
Input capacitance Ciss Vds = 25V, f = 1MHz - 600 - pF
Output capacitance Coss Vds = 25V, f = 1MHz - 200 - pF
Reverse transfer capacitance Crss Vds = 25V, f = 1MHz - 100 - pF
Continuous drain current Id Tc = 25掳C - - 8 A
Pulse drain current Idp Tc = 25掳C, tp = 10ms - - 20 A
Maximum gate-source voltage Vgs(max) - - - 卤20 V
Maximum drain-source voltage Vds(max) - - - 200 V

Instructions for Use:

  1. Handling Precautions:

    • The 2SK369-BL is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
  2. Biasing:

    • Ensure the gate-source voltage (Vgs) does not exceed the maximum rating of 卤20V to prevent damage to the device.
  3. Thermal Management:

    • For continuous operation at high currents, ensure adequate heat sinking to maintain junction temperature within safe limits.
  4. Switching Applications:

    • When using the 2SK369-BL in switching applications, account for the input, output, and reverse transfer capacitances to optimize switching speed and minimize losses.
  5. Storage and Operating Temperature:

    • Store and operate the device within the specified temperature ranges to avoid performance degradation or failure.
  6. Mounting:

    • Properly mount the device to ensure good thermal contact and mechanical stability. Follow manufacturer guidelines for mounting torque and techniques.
  7. Testing:

    • During testing, do not exceed the pulse drain current limit of 20A for more than 10ms to prevent overheating and potential damage.
(For reference only)

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