29F040CQI-70G

29F040CQI-70G


Specifications
Details

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Parameter Description Value
Device Type Flash Memory
Manufacturer Intel
Part Number 29F040CQI-70G
Package Type TSOP (Thin Small Outline Package)
Memory Size 512 K x 8 bits 4 Mbit
Voltage - Supply VCC 3.3V
Operating Temp. Temperature Range -40掳C to +85掳C
Programming Voltage VPP for programming 12.5V 卤 0.5V
Access Time Maximum Access Time 70 ns
Endurance Write/Erase Cycles 100,000 cycles
Data Retention Data Retention at 25掳C 10 years

Instructions for Use:

  1. Power Supply Requirements: Ensure that the supply voltage (VCC) is set to 3.3V. The device must be powered within the specified range to avoid damage.
  2. Programming Voltage: Apply 12.5V 卤 0.5V to the VPP pin during the programming phase. This higher voltage is necessary for writing data to the flash memory.
  3. Temperature Considerations: Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance and longevity.
  4. Access Timing: Design your system timing to accommodate a maximum access time of 70 nanoseconds.
  5. Write/Erase Operations: Be mindful of the endurance rating; the device can withstand up to 100,000 write/erase cycles.
  6. Data Storage: For optimal data retention, store the device in environments where the temperature does not exceed 25掳C for more than 10 years.

Note: Always refer to the official datasheet from Intel for the most accurate and detailed information regarding this component.

(For reference only)

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