Details

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BUY IRLR7843 https://www.utsource.net/itm/p/12610906.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	3.8	-	mΩ	VGS = 10V, ID = 27A, Tc = 25°C
Gate Charge	QG	-	46	-	nC
Input Capacitance	Ciss	-	1480	-	pF	VDS = 10V
Output Capacitance	Coss	-	320	-	pF	VDS = 10V
Threshold Voltage	VGS(th)	1.0	1.5	2.0	V	ID = 250μA
Continuous Drain Current	ID	-	27	-	A	TC = 25°C
Pulse Drain Current	IDM	-	90	-	A	Pulse Width ≤ 10ms, Duty Cycle < 1%

Instructions for Use:

1. Power Dissipation Management: Ensure that the power dissipation does not exceed the maximum allowable value to prevent overheating and potential damage.

2. Heat Sinking: For applications requiring high current or continuous operation, consider using a heat sink to maintain junction temperature within safe limits.

3. Gate Drive Voltage: Apply gate drive voltage according to the application requirements. Higher gate voltages can reduce RDS(on) but should not exceed the maximum ratings.

4. Switching Frequency Consideration: The switching frequency affects the performance of the MOSFET. Higher frequencies increase switching losses, so design circuits considering these factors.

5. Storage Temperature Range: Store the device in an environment where the temperature ranges from -65°C to +150°C to ensure long-term reliability.

6. Handling Precautions: Follow proper handling procedures to avoid damage from electrostatic discharge (ESD).

7. Mounting Orientation: Ensure correct mounting orientation to avoid mechanical stress on the leads which can affect electrical characteristics.

8. Derating Above Ambient Temperature: Derate the continuous drain current as ambient temperature increases beyond 25°C to maintain reliable operation.

Note: Always refer to the latest datasheet provided by the manufacturer for the most accurate and detailed information.

(For reference only)