Details

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BUY IRFP27N60K https://www.utsource.net/itm/p/12610930.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-600	-	-	V	-
Gate-Source Voltage	VGS	-20	-	20	V	-
Continuous Drain Current	ID	-	27	-	A	TC = 25掳C
Pulse Drain Current	IDpeak	-	138	-	A	tp = 10 渭s, IG = 10 A, TC = 25掳C
Power Dissipation	PTOT	-	240	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature Range	TSTG	-65	-	150	掳C	-
Total Gate Charge	QG	-	130	-	nC	-
Input Capacitance	Ciss	-	1900	-	pF	VDS = 25 V, f = 1 MHz
Output Capacitance	Coss	-	230	-	pF	VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	230	-	pF	VDS = 25 V, f = 1 MHz
On-State Resistance	RDS(on)	-	0.18	-	惟	VGS = 10 V, ID = 27 A, TC = 25掳C
Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250 渭A
Gate-Source Leakage Current	IGSS	-	-	卤100	nA	VGS = 卤20 V, TA = 25掳C
Drain Leakage Current	IDSS	-	-	100	渭A	VDS = 600 V, TA = 25掳C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings specified in the table.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage.

2. Mounting:

   • Ensure good thermal management to keep the junction temperature within the specified limits.
   • Use a heatsink if necessary to dissipate heat effectively.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the recommended range to ensure reliable operation.
   • Ensure the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly.

4. Operation:

   • Operate the device within the safe operating area (SOA) to avoid thermal runaway and potential damage.
   • Monitor the drain current (I_D) and power dissipation (P_TOT) to ensure they do not exceed the rated values.

5. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range.
   • Protect the device from moisture and physical damage during storage and transportation.

6. Testing:

   • Perform initial testing at room temperature to verify the device parameters.
   • Gradually increase the load and environmental conditions to ensure stable performance under all operating conditions.

(For reference only)