Details

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BUY 2SC1986 https://www.utsource.net/itm/p/12610936.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	400	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector-Base Voltage	VCB	-	-	400	V
Collector Current	IC	-	-	3	A
Base Current	IB	-	-	0.3	A
Power Dissipation	PT	-	-	65	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	RthJC	-	2.5	-	掳C/W

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SC1986 with care to avoid mechanical damage.
   • Use appropriate ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking to manage the thermal resistance and maintain the junction temperature within safe limits.
   • Use a heatsink with a thermal resistance that ensures the junction temperature does not exceed 150掳C under maximum power dissipation conditions.

3. Biasing:

   • Ensure that the base current (I_B) is sufficient to drive the collector current (I_C) but not excessive to avoid overheating.
   • Use a suitable biasing network to maintain stable operation over a range of temperatures and supply voltages.

4. Operating Conditions:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CE), emitter-base voltage (V_EB), collector-base voltage (V_CB), collector current (I_C), base current (I_B), and power dissipation (P_T).
   • Operate the device within the specified temperature ranges to ensure reliable performance and longevity.

5. Testing:

   • Use a transistor tester or a multimeter to verify the functionality of the 2SC1986 before installation.
   • Perform periodic checks to ensure the device is operating within its specified parameters.

6. Storage:

   • Store the 2SC1986 in a dry, cool place away from direct sunlight and extreme temperatures.
   • Keep the device in its original packaging until ready for use to protect against physical damage and contamination.

(For reference only)