Details

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BUY 2SA1264N https://www.utsource.net/itm/p/12610939.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	80	-	V
Collector-Base Voltage	VCB	-	80	-	V
Emitter-Base Voltage	VEB	-	5	-	V
Collector Current	IC	-	3000	-	mA
Base Current	IB	-	300	-	mA
Power Dissipation	PT	-	125	-	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
DC Current Gain (hFE)	hFE	20	100	400	-
Transition Frequency	fT	-	10	-	MHz

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SA1264N with care to avoid mechanical damage.
   • Ensure proper heat sinking if operating at high power levels to maintain junction temperature within specified limits.

2. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly to avoid damage.
   • Use appropriate current-limiting resistors to prevent excessive base current.

3. Operating Conditions:

   • Ensure that the operating voltages and currents do not exceed the maximum ratings.
   • Operate the device within the recommended temperature range to ensure reliable performance.

4. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Avoid exposure to extreme temperatures and direct sunlight.

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the 2SA1264N.
   • Check for short circuits and open circuits between the terminals before use.

6. Soldering:

   • Use a soldering iron with a temperature no higher than 300掳C to avoid damaging the device.
   • Solder each terminal quickly to minimize thermal stress.

7. Circuit Design:

   • Design the circuit to include necessary protection components such as diodes for reverse voltage protection and capacitors for filtering.
   • Consider the thermal resistance and heat dissipation requirements when designing the circuit layout.

(For reference only)