Details

---

BUY 2N6491 https://www.utsource.net/itm/p/12610944.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	300	V
Emitter-Collector Voltage	VECO	-	-	300	V
Base-Emitter Voltage	VBE	-	-	7	V
Collector Current	IC	-	1	1.5	A
Base Current	IB	-	-	0.15	A
Power Dissipation	PT	-	-	65	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance	RthJC	-	-	1.5	掳C/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking if operating at or near maximum power dissipation.
   • Use insulated mounting hardware to avoid short circuits.

2. Biasing:

   • Apply base current (I_B) sufficient to ensure the transistor is fully saturated when in the on state.
   • Use appropriate resistors to limit base current and protect the base-emitter junction from overvoltage.

3. Operation:

   • Do not exceed the maximum ratings listed in the table to avoid damage to the device.
   • Operate within the recommended temperature range to ensure reliable performance.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Handle with care to avoid static discharge which can damage the device.

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the 2N6491.
   • Test under controlled conditions to avoid exceeding maximum ratings.

6. Soldering:

   • Use a soldering iron with a temperature no higher than 300掳C to avoid damaging the device.
   • Complete soldering quickly to minimize thermal stress on the transistor.

7. Applications:

   • Suitable for high-power amplifiers, switches, and other applications requiring high current and voltage handling capabilities.

(For reference only)