Details

---

BUY 2N3553 https://www.utsource.net/itm/p/12610957.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	-	40	-	V
Emitter-Collector Voltage	VEBO	-	6	-	V
Base-Emitter Voltage	VBE	-	1.8	-	V
Collector Current	IC	-	150	-	mA
Base Current	IB	-	15	-	mA
Power Dissipation	PT	-	350	-	mW
Junction Temperature	TJ	-	150	-	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	200	-	MHz

Instructions for Use:

1. Handling:

   • Handle with care to avoid damage to the leads and the semiconductor structure.
   • Avoid exposure to high temperatures and humidity.

2. Mounting:

   • Ensure proper heat dissipation if operating near the maximum power dissipation.
   • Use appropriate mounting techniques to secure the component without excessive force on the leads.

3. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly.
   • Ensure that the voltage and current ratings are not exceeded to prevent damage to the transistor.

4. Storage:

   • Store in a dry, cool place to prevent degradation.
   • Keep away from static electricity sources.

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor.
   • Check for continuity between the base and emitter, and the collector and emitter.

6. Applications:

   • Suitable for general-purpose amplification and switching applications.
   • Can be used in audio circuits, power supplies, and other electronic devices where moderate power handling is required.

(For reference only)