Details

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BUY M29F010B-70K6 https://www.utsource.net/itm/p/12610959.html

Parameter	Description	Value
Device Type	Flash Memory	1 Mbit (128 K x 8)
Package	Plastic Dual Inline Package (PDIP), Ceramic Dual Inline Package (CDIP)	32-pin
Operating Voltage	Vcc	5.0V 卤 0.5V
Programming Voltage	Vpp	12.5V 卤 0.5V
Data Retention	Minimum Data Retention Time	10 years
Endurance	Write/Erase Cycles	100,000 cycles
Access Time	Read Access Time	70 ns
Write Time	Typical Write Time	5 ms
Erase Time	Typical Block Erase Time	1 second
Temperature Range	Industrial Temperature Range	-40掳C to +85掳C
Storage Temperature	Storage Temperature Range	-65掳C to +150掳C
Standby Current	Standby Current at Vcc = 5V	10 渭A max
Active Current	Active Current at Vcc = 5V	10 mA max

Instructions for Use

1. Power Supply:

   • Ensure that the Vcc is within the specified range of 5.0V 卤 0.5V.
   • The programming voltage Vpp should be set to 12.5V 卤 0.5V when writing or erasing data.

2. Addressing:

   • The device is organized as 128K x 8 bits, with addresses ranging from 0x00000 to 0x1FFFF.

3. Read Operation:

   • Apply the desired address to the address lines (A0-A16).
   • Set the chip select (CS) and output enable (OE) low to read data from the selected address.
   • Data will be available on the data lines (D0-D7) after the specified access time.

4. Write Operation:

   • Apply the desired address to the address lines (A0-A16).
   • Set the chip select (CS) and write enable (WE) low to initiate the write cycle.
   • Data to be written should be applied to the data lines (D0-D7).
   • The write cycle will complete in approximately 5 ms.

5. Erase Operation:

   • To erase a block, apply the appropriate erase command sequence.
   • The block erase operation will take approximately 1 second to complete.

6. Temperature Considerations:

   • Operate the device within the industrial temperature range of -40掳C to +85掳C.
   • Store the device in an environment with temperatures between -65掳C and +150掳C.

7. Current Consumption:

   • Monitor the standby current, which should not exceed 10 渭A.
   • Ensure that the active current does not exceed 10 mA during read/write operations.

8. Handling Precautions:

   • Handle the device with care to avoid static damage.
   • Follow proper soldering and mounting procedures to ensure reliable operation.

For detailed command sequences and timing diagrams, refer to the datasheet provided by the manufacturer.

(For reference only)