Details

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BUY FMMT717 https://www.utsource.net/itm/p/12610970.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	-	40	V	IC = -200渭A
Emitter-Base Voltage	VEB	-5	-	5	V	IE = 卤1mA
Collector Current	IC	-	200	-	渭A	VCE = 30V
Base-Emitter Saturation Voltage	VBE(sat)	0.6	-	1.2	V	IC = 10渭A, IB = 100渭A
Collector-Emitter Saturation Voltage	VCE(sat)	0.1	-	0.3	V	IC = 10渭A, IB = 100渭A
Storage Temperature Range	Tstg	-65	-	150	掳C	-
Operating Junction Temperature	TJop	-65	-	150	掳C	-

Instructions for FMMT717:

1. Handling Precautions: The FMMT717 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure the device is mounted in a way that allows for adequate heat dissipation if operating near its maximum temperature limits.
3. Biasing: Proper biasing of the base-emitter junction is crucial for optimal performance. Ensure the base current (IB) is sufficient to keep the transistor in saturation when used as a switch.
4. Voltage Limits: Do not exceed the maximum collector-emitter voltage (VCE) or emitter-base voltage (VEB) ratings to avoid damage to the device.
5. Temperature Considerations: Operate within the specified temperature range to ensure reliable operation and longevity of the device.
6. Testing: When testing the device, use conditions that closely match the typical operating parameters to get accurate performance data.

(For reference only)