EMZR160ARA221MF61G

EMZR160ARA221MF61G


Specifications
Details

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Parameter Value Unit
Part Number EMZR160ARA221MF61G
Type MOSFET
Configuration N-Channel
Package TO-252 (DPAK)
Drain-Source Voltage 60 V
Continuous Drain Current 3.8 A
Gate-Source Voltage 卤20 V
Power Dissipation 1.7 W
Total Capacitance 490 pF
Operating Temperature -55 to +150 掳C
RDS(on) @ VGS=10V 0.047
Gate Charge 29 nC

Instructions:

  1. Handling Precautions: The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
  2. Mounting: Ensure that the mounting orientation and torque are within the specified limits to avoid mechanical damage.
  3. Soldering: Follow the recommended soldering profile to prevent thermal damage. Avoid excessive heating of the leads.
  4. Storage: Store in a dry environment and use within the recommended storage time to maintain reliability.
  5. Application Circuits: Refer to application notes for detailed circuit design considerations, including gate drive requirements and heat sinking.
  6. Testing: Perform electrical tests under standard conditions to ensure performance specifications are met.
(For reference only)

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