Details

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BUY 2SC2562 https://www.utsource.net/itm/p/12611014.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	80	V	Maximum voltage between collector and emitter with base open
Base-Emitter Voltage	VBE	-	1.8	2.4	V	Maximum voltage between base and emitter at IC = 150 mA
Collector Current	IC	-	150	300	mA	Continuous collector current
Power Dissipation	PT	-	-	625	mW	Maximum power dissipation at TA = 25掳C
DC Current Gain	hFE	20	100	400	-	DC current gain at IC = 150 mA, VCE = 10 V
Transition Frequency	fT	-	100	200	MHz	Transition frequency at IC = 150 mA, VCE = 10 V
Storage Temperature Range	TSTG	-55	-	150	掳C	Temperature range for storage
Operating Temperature Range	TA	-55	-	150	掳C	Ambient temperature range for operation

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Avoid mechanical stress on the leads during soldering.

2. Biasing:

   • Use appropriate biasing circuits to ensure stable operation.
   • For linear applications, keep the transistor within its safe operating area (SOA).

3. Handling:

   • Handle with care to avoid static damage.
   • Use anti-static wrist straps and mats when handling the device.

4. Testing:

   • Test the device under controlled conditions to avoid exceeding maximum ratings.
   • Use a curve tracer or equivalent equipment to verify parameters.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to prevent damage.

6. Soldering:

   • Preheat the PCB to reduce thermal shock.
   • Use a soldering iron with a temperature not exceeding 300掳C.
   • Complete soldering within 5 seconds per joint to avoid overheating.

7. Safety:

   • Always refer to the datasheet for specific safety guidelines.
   • Ensure all connections are secure and insulated to prevent short circuits.

(For reference only)