Details

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BUY MT48LC8M32B2TG-7F https://www.utsource.net/itm/p/12611033.html

Parameter	Description	Specifications
Device Type	Synchronous DRAM (SDRAM)
Density	64 Mbit
Organization	8M x 32
Supply Voltage (Vcc)	Operating Voltage	3.3V 卤 0.3V
Supply Voltage (Vccq)	I/O Supply Voltage	3.3V 卤 0.3V
Access Time (tAC)	Access Time	7 ns
Cycle Time (tRC)	Cycle Time	45 ns
Refresh Rate	Refresh Rate	8192 refresh cycles per 64ms
Package Type	Package	Thin Small Outline Package (TSOP II)
Operating Temperature	Operating Temperature Range	-40掳C to +85掳C
Standby Current (Icc)	Standby Current	2 mA (Typical)
Active Current (Icc)	Active Current	250 mA (Typical)

Instructions for Use:

1. Power Supply: Ensure that both Vcc and Vccq are supplied with a stable 3.3V 卤 0.3V power source.
2. Initialization: After applying power, allow the device to initialize properly before performing any read/write operations.
3. Clock Signal: Provide a stable clock signal to the CLK pin. The frequency should be within the operational limits specified in the datasheet.
4. Refresh Operations: Implement refresh cycles as required by the refresh rate specification to maintain data integrity.
5. Addressing and Data Transfer: Use the address lines (A0-A12) to specify the memory location and the data lines (DQ0-DQ31) for data transfer.
6. Control Signals: Properly manage control signals such as CS#, RAS#, CAS#, and WE# for correct operation of read and write commands.
7. Temperature Considerations: Operate the device within the specified temperature range to ensure reliable performance.
8. Handling: Handle the device with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.

(For reference only)