Details

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BUY MRFE6VP61K25GNR6 https://www.utsource.net/itm/p/12611049.html

Parameter	Value	Unit
Device	MRFE6VP61K25GNR6
Type	RF Power MOSFET
Package	TO-247-3L
Max Drain-Source Voltage (VDS)	60	V
Max Gate-Source Voltage (VGS)	±20	V
Continuous Drain Current (ID)	61	A
Pulse Drain Current (IDM)	250	A
RDS(on) at VGS=10V	8.5	mΩ
Power Dissipation (PD)	220	W
Junction Temperature (TJ)	-55 to +175	°C
Storage Temperature (TSTG)	-55 to +150	°C

Instructions:

1. Installation: Ensure the device is mounted on a suitable heatsink to manage heat dissipation, especially when operating near maximum power levels.
2. Handling Precautions: Use proper ESD (Electrostatic Discharge) protection measures while handling the device to prevent damage.
3. Biasing Conditions: Operate within specified gate-source voltage limits to avoid damaging the gate oxide.
4. Current Limitation: Do not exceed the continuous or pulse drain current ratings to prevent thermal runaway and potential device failure.
5. Temperature Monitoring: Regularly monitor the junction temperature to ensure it remains within operational limits.
6. Application Notes: Refer to the manufacturer’s application notes for detailed guidelines on using this device in various circuit configurations.

(For reference only)