Details
BUY K3113B https://www.utsource.net/itm/p/12611073.html
| Parameter | Description |
|---|---|
| Part Number | K3113B |
| Type | Bipolar Junction Transistor (BJT) |
| Polarity | NPN |
| Collector-Emitter Voltage (Vceo) | 45 V |
| Emitter-Base Voltage (Vebo) | 6 V |
| Collector Current (Ic) | 800 mA |
| Power Dissipation (Ptot) | 625 mW at Tc = 25掳C |
| Transition Frequency (ft) | 300 MHz |
| DC Current Gain (hFE) | Min 100, Max 700 at IC=10mA, VCE=10V |
| Storage Temperature Range (Tstg) | -55掳C to +150掳C |
| Operating Temperature Range (Topr) | -55掳C to +150掳C |
| Package Type | SOT-23 |
Instructions for Use:
- Handling Precautions: The K3113B is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures when handling the device.
- Mounting: Ensure that the mounting area is clean and free from contaminants. Follow manufacturer guidelines for soldering temperatures and times to avoid damage.
- Biasing: Proper biasing of the base-emitter junction is crucial to achieve optimal performance. Refer to application notes for detailed biasing circuits.
- Heat Management: Given the power dissipation limits, ensure adequate heat sinking if operating near maximum current or in high ambient temperatures.
- Testing: When testing the device, do not exceed the specified voltage and current ratings. Use protective circuitry as necessary during testing phases.
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