SMBG18A-E3/52

SMBG18A-E3/52


Specifications
Details

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Parameter Description Value Unit
Part Number Component Identifier SMBG18A-E3/52 -
Type Device Type Schottky Diode -
Maximum Repetitive Peak Reverse Voltage (VRRM) Maximum reverse voltage the diode can withstand repeatedly 40 V
Maximum Average Forward Rectified Current (IF(AV)) Continuous forward current at specified conditions 1.0 A
Peak Forward Surge Current (IFSM) Non-repetitive peak forward current for 8.3ms sine-wave half-wave 20 A
Maximum RMS Reverse Current (IRMS) RMS value of reverse current 0.01 A
Junction Operating Temperature (TJ) Range of temperatures over which the device can operate safely -55 to +150 掳C
Storage Temperature (TSTG) Temperature range over which the device can be stored without damage -55 to +150 掳C
Forward Voltage Drop (VF) Voltage drop across the diode when conducting forward current 0.37 V
Reverse Recovery Time (trr) Time taken by the diode to recover from conducting to blocking state 60 ns
Case Style Package type SOD-123 -
Moisture Sensitivity Level (MSL) Indicates how sensitive the component is to moisture 1 -

Instructions:

  1. Handling: Handle with care to avoid damage to leads and body. Use appropriate ESD protection.
  2. Mounting: Ensure correct orientation during mounting. Follow manufacturer guidelines for soldering temperature and time.
  3. Storage: Store in a dry environment within the specified storage temperature range.
  4. Operation: Operate within the specified junction temperature range to ensure reliability and longevity.
  5. Testing: Verify parameters such as forward voltage drop and reverse recovery time using appropriate test equipment before installation.
  6. Surge Current Handling: Ensure that any surge currents do not exceed the peak forward surge current rating to prevent damage.
  7. Environmental Considerations: Follow environmental regulations regarding disposal and recycling.
(For reference only)

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