Details

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BUY RJP63G4DPP https://www.utsource.net/itm/p/12611148.html

Parameter	Description	Value	Unit
Part Number	Product Identifier	RJP63G4DPP	-
Type	Device Type	Power MOSFET	-
Configuration	Channel Configuration	N-Channel	-
VDS (Drain-Source Voltage)	Maximum Drain-Source Voltage	650	V
ID (Continuous Drain Current)	Continuous Drain Current at 25掳C	17.8	A
RDS(on) (On-Resistance)	On-Resistance at 25掳C, VGS=10V	3.9	m惟
PD (Power Dissipation)	Maximum Power Dissipation	175	W
VGS(th) (Gate Threshold Voltage)	Gate Threshold Voltage	2.5 to 4.5	V
fT (Transition Frequency)	Transition Frequency	2.4	MHz
Package Type	Encapsulation Type	DPAK	-
Operating Temperature	Junction Temperature Range	-55 to 150	掳C

Instructions for Use:

1. Mounting: Ensure the device is mounted on a heatsink if operating near maximum power dissipation.
2. Handling: Handle with care to avoid damage to the leads and body of the component.
3. Electrostatic Sensitivity: The device is sensitive to electrostatic discharge (ESD); use appropriate precautions.
4. Soldering: Follow recommended soldering profiles to prevent thermal damage during assembly.
5. Testing: Verify the correct operation of the circuit after installation and ensure all connections are secure.
6. Storage: Store in a dry environment away from direct sunlight and high temperatures.
7. Applications: Suitable for applications requiring efficient switching, such as power supplies, motor control, and automotive electronics.

(For reference only)