IXTQ22N50

IXTQ22N50


Specifications
Details

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Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage V CES 500 V
Emitter-Collector Voltage V ECS 500 V
Gate-Emitter Voltage V GES -15 15 V
Continuous Collector Current I C T C = 25°C 22 A
T C = 75°C 16.5 A
Pulse Collector Current I CM t = 10 ms, T C = 25°C 44 A
Power Dissipation P TOT T C = 25°C 350 W
Junction Temperature T J -55 175 °C
Storage Temperature T STG -55 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Handle with care to avoid damage to the gate terminal.
  2. Electrical Connections:

    • Connect the emitter to the common ground.
    • Ensure the gate is properly isolated from other circuitry to prevent unwanted triggering.
  3. Operating Conditions:

    • Operate within the specified voltage and current ratings to avoid damage.
    • For pulse applications, ensure pulse width and frequency are within safe operating areas.
  4. Thermal Management:

    • Monitor the device temperature especially under high load conditions.
    • Use appropriate thermal management techniques like heatsinks or cooling fans if necessary.
  5. Storage and Packaging:

    • Store in a dry environment to prevent moisture damage.
    • Follow anti-static precautions when handling to protect against ESD (Electrostatic Discharge).

Note: Always refer to the manufacturer’s datasheet for detailed specifications and application notes.

(For reference only)

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