Details
BUY IXTQ22N50 https://www.utsource.net/itm/p/12611193.html
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | V CES | 500 | V | |||
| Emitter-Collector Voltage | V ECS | 500 | V | |||
| Gate-Emitter Voltage | V GES | -15 | 15 | V | ||
| Continuous Collector Current | I C | T C = 25°C | 22 | A | ||
| T C = 75°C | 16.5 | A | ||||
| Pulse Collector Current | I CM | t = 10 ms, T C = 25°C | 44 | A | ||
| Power Dissipation | P TOT | T C = 25°C | 350 | W | ||
| Junction Temperature | T J | -55 | 175 | °C | ||
| Storage Temperature | T STG | -55 | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Handle with care to avoid damage to the gate terminal.
Electrical Connections:
- Connect the emitter to the common ground.
- Ensure the gate is properly isolated from other circuitry to prevent unwanted triggering.
Operating Conditions:
- Operate within the specified voltage and current ratings to avoid damage.
- For pulse applications, ensure pulse width and frequency are within safe operating areas.
Thermal Management:
- Monitor the device temperature especially under high load conditions.
- Use appropriate thermal management techniques like heatsinks or cooling fans if necessary.
Storage and Packaging:
- Store in a dry environment to prevent moisture damage.
- Follow anti-static precautions when handling to protect against ESD (Electrostatic Discharge).
Note: Always refer to the manufacturer’s datasheet for detailed specifications and application notes.
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