Details

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BUY 2SD1402 https://www.utsource.net/itm/p/12611283.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 0	-	-	40	V
Emitter-Collector Voltage	VECEO	IE = 0	-	-	40	V
Base-Emitter Voltage	VBE	IC = 50mA, IE = 0	-	-	1.2	V
Collector Current	IC	VCE = 30V	-	100	300	mA
Base Current	IB	VCE = 30V, IC = 100mA	-	1	3	mA
DC Current Gain	hFE	IC = 100mA	100	300	600	-
Transition Frequency	fT	IC = 10mA, VCE = 3V	-	250	-	MHz
Storage Temperature	Tstg	-	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: The 2SD1402 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.

2. Mounting: Ensure that the transistor is mounted correctly on the PCB. Verify pin orientation before soldering.

3. Operating Conditions: Do not exceed the maximum ratings listed in the table. Exceeding these limits can cause permanent damage to the device.

4. Heat Dissipation: If operating near the maximum collector current, ensure adequate heat dissipation to prevent overheating.

5. Storage: Store in a dry, cool place within the specified storage temperature range to avoid damage.

6. Testing: When testing or measuring parameters, ensure conditions match those specified in the parameter table for accurate results.

7. Application Circuits: Refer to application notes and example circuits provided by the manufacturer for optimal performance in specific applications.

(For reference only)