Details

---

BUY BCR8PM-20L https://www.utsource.net/itm/p/12611285.html

Parameter	Description	Value
Part Number	Device Identifier	BCR8PM-20L
Type	Device Type	Power MOSFET
Package	Package Type	TO-220
VDSS	Drain-to-Source Voltage	200 V
ID	Continuous Drain Current	8 A
RDS(on)	On-State Resistance at 10V VGS	0.25 惟
VGS(th)	Gate Threshold Voltage	2.0 V to 4.0 V
PTOT	Total Power Dissipation	65 W
fSW	Switching Frequency	500 kHz
QG	Total Gate Charge	30 nC
Operating Temperature Range	Junction Temperature	-55掳C to +150掳C
Storage Temperature Range	Storage Temperature	-65掳C to +150掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use thermal paste between the device and the heatsink for better thermal conductivity.

2. Biasing:

   • Apply gate voltage (V_GS) within the specified range to ensure reliable operation.
   • Avoid exceeding the maximum gate-source voltage (V_GS(max)) to prevent damage.

3. Current Handling:

   • Do not exceed the continuous drain current (I_D) or the total power dissipation (P_TOT).
   • For pulsed applications, refer to the datasheet for derating curves.

4. Switching:

   • Keep switching frequency within the recommended range to minimize switching losses.
   • Use appropriate gate drive circuits to ensure fast and clean transitions.

5. Storage:

   • Store in a dry, cool environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the package.

6. ESD Protection:

   • Use proper ESD protection measures during handling and assembly.
   • Ground all equipment and personnel before handling the device.

7. Testing:

   • Refer to the datasheet for specific test conditions and procedures.
   • Use calibrated test equipment to ensure accurate measurements.

(For reference only)