Details
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| Parameter | Description | Value |
|---|---|---|
| Device Type | Electrically Erasable Programmable Read-Only Memory (EEPROM) | - |
| Memory Size | Total Memory Size | 2 Kbits (256 x 8) |
| Organization | Memory Organization | 256 x 8 |
| Vcc (Supply Voltage) | Operating Voltage Range | 4.5V to 5.5V |
| Icc (Supply Current) | Active Mode Current | 200 渭A (max) |
| Standby Current | Standby Mode Current | 50 渭A (max) |
| Data Retention | Data Retention Time | 10 years |
| Write Cycle Time | Time to Write One Byte | 10 ms (max) |
| Erase Cycle Time | Time to Erase All Bytes | 10 ms (max) |
| Operating Temperature | Temperature Range | -40掳C to +85掳C |
| Package Type | Package Style | DIP-8, SOIC-8 |
| Pin Configuration | Pin 1: A0 | Address Input 0 |
| Pin 2: A1 | Address Input 1 | |
| Pin 3: A2 | Address Input 2 | |
| Pin 4: A3 | Address Input 3 | |
| Pin 5: A4 | Address Input 4 | |
| Pin 6: A5 | Address Input 5 | |
| Pin 7: A6 | Address Input 6 | |
| Pin 8: A7 | Address Input 7 | |
| Pin 9: Vcc | Supply Voltage | |
| Pin 10: OE | Output Enable | |
| Pin 11: CE | Chip Enable | |
| Pin 12: WE | Write Enable | |
| Pin 13: Q0 | Data Output 0 | |
| Pin 14: Q1 | Data Output 1 | |
| Pin 15: Q2 | Data Output 2 | |
| Pin 16: Q3 | Data Output 3 | |
| Pin 17: Q4 | Data Output 4 | |
| Pin 18: Q5 | Data Output 5 | |
| Pin 19: Q6 | Data Output 6 | |
| Pin 20: Q7 | Data Output 7 | |
| Pin 21: GND | Ground |
Instructions for Use:
Power Supply:
- Connect Vcc to a stable 5V power supply.
- Connect GND to the ground.
Addressing:
- Set the address lines (A0-A7) to select the desired memory location.
Reading Data:
- Set CE (Chip Enable) to low to activate the chip.
- Set OE (Output Enable) to low to enable data output.
- The data at the selected address will appear on the Q0-Q7 pins.
Writing Data:
- Set CE (Chip Enable) to low to activate the chip.
- Set WE (Write Enable) to low to initiate a write operation.
- Set the address lines (A0-A7) to the desired memory location.
- Apply the data to be written to the Q0-Q7 pins.
- Maintain WE low for at least 10 ms to ensure the write cycle completes.
Erasing Data:
- To erase the entire memory, perform a write cycle with all data lines set to high (1).
Standby Mode:
- Set CE to high to put the device into standby mode, reducing power consumption.
Temperature Considerations:
- Ensure the operating temperature remains within the specified range (-40掳C to +85掳C) to avoid damage or data corruption.
Data Retention:
- Data retention is guaranteed for up to 10 years under normal operating conditions.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage the internal circuitry.
- Store the device in a dry, cool environment when not in use.
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