Details

---

BUY 2SC5387 https://www.utsource.net/itm/p/12611335.html

Below is the parameter table and instructions for the 2SC5387 transistor:

2SC5387 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	100	V
Collector-Base Voltage	VCBO	-	-	120	V
Emitter-Base Voltage	VEBO	-	-	6	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	1.5	A
Power Dissipation	PT	-	-	125	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	300	-	MHz
DC Current Gain (hFE)	hFE	20	100	400	-
Saturation Voltage	VCE(sat)	0.5	1.2	2.0	V
Storage Time	ts	-	100	-	ns

Instructions for Using 2SC5387

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid mechanical damage.
   • Use appropriate heat sinks to manage the power dissipation and keep the junction temperature within safe limits.

2. Biasing:

   • Proper biasing is crucial to ensure the transistor operates in the desired region (cut-off, active, or saturation).
   • Use the DC current gain (h_FE) to determine the base current (I_B) required for a given collector current (I_C).

3. Operating Conditions:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Ensure that the junction temperature does not exceed 150掳C to prevent thermal damage.

4. Testing:

   • Test the transistor under controlled conditions to verify its parameters.
   • Use a multimeter or a transistor tester to check the continuity and gain of the transistor.

5. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
   • Keep the device in its original packaging until ready for use to protect it from static discharge.

6. Soldering:

   • Use a low-wattage soldering iron to avoid overheating the transistor.
   • Ensure that the soldering iron is properly grounded to prevent static damage.

By following these instructions, you can ensure the reliable operation and longevity of the 2SC5387 transistor.

(For reference only)