Details

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BUY QGAH02094 https://www.utsource.net/itm/p/12611364.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	QGAH02094	-
Type	Component Type	MOSFET	-
Vds (Max)	Maximum Drain-to-Source Voltage	60	V
Id (Max)	Maximum Continuous Drain Current	16	A
Rds(on)	On-State Resistance at Vgs = 10V, Id = 5.7A	12	m惟
Vgs(th)	Gate Threshold Voltage	2.0 to 4.0	V
Power Dissipation (Max)	Maximum Power Dissipation at Tc = 25掳C	2.3	W
Junction Temperature	Operating Junction Temperature Range	-55 to 150	掳C
Package	Component Package Type	TO-252	-

Instructions for Use:

1. Installation: Ensure that the device is handled with care to avoid damage to the leads or body. Use appropriate tools and techniques for soldering.
2. Operating Conditions: Do not exceed the maximum ratings provided in the table. Pay special attention to the maximum drain-to-source voltage and continuous drain current limits.
3. Thermal Management: Since the maximum power dissipation is specified, ensure adequate heat sinking if operating near this limit to prevent overheating.
4. Gate Drive: Apply gate voltages within the threshold range to ensure proper switching. Avoid exceeding the maximum gate-to-source voltage to prevent damage.
5. Storage: Store in a dry, cool environment away from direct sunlight and corrosive substances.
6. Handling Electrostatic Sensitive Devices (ESD): Follow standard ESD precautions when handling to avoid damaging the component.

(For reference only)