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BUY N82S123 https://www.utsource.net/itm/p/12611386.html

Below is the parameter table and instructions for the N82S123, a 16K x 8 CMOS Static RAM.

N82S123 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	Vcc	4.5	5.0	5.5	V
Standby Current	Icc(SB)	1.0	2.0	5.0	渭A	Vcc = 5V, All inputs at Vcc or GND
Active Current (Read/Write)	Icc(ACT)	-	10	20	mA	Vcc = 5V, f = 10 MHz
Output High Level	VOH	2.4	-	Vcc-0.5	V	Vcc = 5V, IIH = 0.4 mA
Output Low Level	VOL	0.0	-	0.4	V	Vcc = 5V, IOL = 8 mA
Access Time	tAA	70	-	90	ns	Vcc = 5V, f = 10 MHz
Data Hold Time	tDH	0	-	10	ns	Vcc = 5V, f = 10 MHz
Address Setup Time	tAS	10	-	20	ns	Vcc = 5V, f = 10 MHz
Write Cycle Time	tWC	150	-	200	ns	Vcc = 5V, f = 10 MHz
Power-down Time	tPD	0	-	100	ns	Vcc = 5V, f = 10 MHz
Operating Temperature	Toper	-40	-	85	掳C
Storage Temperature	Tstg	-65	-	150	掳C

N82S123 Instructions

1. Power Supply:

   • Connect the Vcc pin to a stable 5V power supply.
   • Connect the GND pin to the ground.

2. Addressing:

   • Connect the address lines (A0-A13) to the appropriate address bus lines.
   • Ensure that the address lines are stable before the access time (tAA).

3. Data Input/Output:

   • Connect the data lines (D0-D7) to the data bus.
   • During a write operation, ensure that the data lines are stable before the write cycle time (tWC).
   • During a read operation, the data lines will be driven by the N82S123 after the access time (tAA).

4. Control Signals:

   • Chip Select (CS): Active low. When CS is low, the chip is selected.
   • Write Enable (WE): Active low. When WE is low, a write operation is performed.
   • Output Enable (OE): Active low. When OE is low, the data lines are driven with the contents of the addressed memory location.

5. Power-down Mode:

   • To enter power-down mode, set CS high. This reduces the current consumption to the standby current (Icc(SB)).

6. Timing Considerations:

   • Ensure that all timing parameters (tAA, tDH, tAS, tWC, tPD) are met to avoid data corruption or incorrect operation.

7. Temperature Range:

   • The device is designed to operate within the temperature range of -40掳C to 85掳C. Ensure that the operating environment does not exceed these limits.

8. Storage:

   • Store the device in a dry, cool place to prevent damage. The storage temperature range is -65掳C to 150掳C.

By following these instructions and adhering to the specified parameters, you can ensure reliable operation of the N82S123 static RAM.

(For reference only)