Details

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BUY BD132 https://www.utsource.net/itm/p/12611395.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0, IE = 0		80		V
Emitter-Base Breakdown Voltage	V(BR)EBO	IC = 0		6		V
Collector-Base Breakdown Voltage	V(BR)CBO	IE = 0		80		V
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 1A, IB = 100mA	1.2	2	3	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 1A, IB = 100mA	1.8	2.5	3	V
Continuous Collector Current	IC	Tc = 25掳C		1.5		A
Power Dissipation	PD	Tc = 25掳C		65		W
Junction Temperature	TJ	Operating Range	-55		150	掳C

Instructions for BD132:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table to prevent damage.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Mounting:

   • Use appropriate mounting hardware and thermal compound for efficient heat transfer.
   • Ensure good electrical and thermal connections.

3. Operation:

   • Operate within the specified junction temperature range to ensure reliable performance.
   • For applications requiring high current, verify that the continuous collector current does not exceed 1.5A at room temperature.

4. Testing:

   • When testing parameters like VCE(sat) and VBE(sat), use the specified test conditions (IC = 1A, IB = 100mA) for accurate measurements.

5. Storage:

   • Store in a dry environment to avoid moisture damage.
   • Handle with care to prevent physical damage or contamination of the leads.

(For reference only)