Details

---

BUY CRE6359 https://www.utsource.net/itm/p/12611405.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	CRE6359	-
Type	Device Type	Power MOSFET	-
Configuration	Channel Configuration	N-Channel	-
VDS	Drain-Source Voltage	600	V
ID	Continuous Drain Current (Tc = 25掳C)	14	A
RDS(on)	On-State Resistance (VGS = 10V, ID = 10A)	0.18	惟
VGS(th)	Gate Threshold Voltage	2 to 4	V
PD	Total Power Dissipation (Ta = 25掳C)	270	W
TJ	Junction Temperature Range	-55 to +175	掳C
SOA	Safe Operating Area	Refer to Datasheet	-
Package	Encapsulation Type	TO-247	-

Instructions for Use:

1. Installation and Handling:

   • Handle the CRE6359 with care to avoid damage to the pins or body.
   • Ensure that the device is mounted on a suitable heatsink if operating at high power levels.

2. Electrical Connections:

   • Connect the Drain (D), Source (S), and Gate (G) terminals correctly as per your circuit design.
   • Ensure all connections are secure and free from short circuits.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Keep the junction temperature within the specified range to ensure reliable operation.

4. Gate Drive:

   • Apply appropriate gate drive voltages to ensure proper switching performance.
   • Avoid applying excessive voltage to the gate which can lead to device failure.

5. Thermal Management:

   • Monitor the temperature of the device during operation.
   • Use thermal compounds and heatsinks as necessary to maintain optimal operating temperatures.

6. Storage:

   • Store in a dry environment away from direct sunlight and sources of heat.
   • Follow anti-static precautions when handling the device.

Refer to the full datasheet for detailed specifications and application notes.

(For reference only)