Details
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| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Supply Voltage | Vcc | 4.5 | 5 | 5.5 | V | Operating supply voltage range |
| Output Current | Iout | - | 100 | 300 | mA | Maximum continuous output current |
| Efficiency | 畏 | 70 | 85 | 92 | % | Power conversion efficiency |
| Switching Frequency | fsw | 1.0 | 1.2 | 1.5 | MHz | Internal oscillator frequency |
| Quiescent Current | IQ | 1 | 2 | 3 | mA | Current consumption in standby |
| Dropout Voltage | Vdo | 0.3 | 0.5 | 0.8 | V | Voltage difference at dropout |
| Thermal Shutdown Temp | TSD | 140 | 160 | 180 | 掳C | Temperature for thermal shutdown |
| Package Type | - | - | - | - | SOIC-8 | Package type |
Instructions:
- Power Supply Connection: Connect the positive terminal of the power supply to the VIN pin and the negative terminal to the GND pin.
- Output Configuration: Connect the load between the VOUT pin and GND. Ensure that the load does not exceed the maximum output current rating.
- Capacitor Installation: Place a 1 渭F capacitor between VIN and GND close to the device for stability. A 10 渭F capacitor is recommended between VOUT and GND for optimal performance.
- Thermal Considerations: Ensure adequate heat dissipation if operating near the maximum output current or in high ambient temperatures to prevent thermal shutdown.
- Efficiency Optimization: For best efficiency, operate within the typical switching frequency range and ensure proper layout to minimize parasitic inductance and resistance.
- Protection Features: The device includes overcurrent protection and thermal shutdown features to safeguard against excessive loads and overheating.
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