Details

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BUY TIP105 https://www.utsource.net/itm/p/12611428.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	-	60	-	V
Emitter-Collector Voltage	VEBO	-	60	-	V
Base-Emitter Voltage (Forward)	VBE(on)	1.4	2.0	2.6	V
Continuous Collector Current	IC	-	5	-	A
Peak Collector Current (Non-repetitive)	IC(peak)	-	50	-	A
Power Dissipation	PT	-	65	-	W
Junction Temperature	TJ	-20	-	150	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C

Instructions for Using TIP105:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation, especially when operating at high currents.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

2. Biasing:

   • The base-emitter voltage (V_BE(on)) is relatively high compared to standard transistors, so ensure the base drive circuit can provide sufficient voltage.
   • Use a current-limiting resistor in series with the base to prevent excessive base current, which can damage the transistor.

3. Current Handling:

   • The TIP105 can handle continuous collector currents up to 5A. For higher currents, ensure that the pulse duration is short and within the non-repetitive peak current rating of 50A.
   • Avoid exceeding the maximum power dissipation (65W) by either reducing the load or improving heat dissipation.

4. Temperature Management:

   • Monitor the junction temperature (T_J) to ensure it stays within the operational range (-20掳C to 150掳C).
   • Store the device within the storage temperature range (-65掳C to 150掳C) to avoid damage.

5. Electrical Isolation:

   • Ensure proper electrical isolation to prevent short circuits and damage to other components in the circuit.

6. Handling:

   • Handle the TIP105 with care to avoid mechanical stress, which can affect its performance.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

(For reference only)