Details

---

BUY HY6116P15 https://www.utsource.net/itm/p/12611441.html

Parameter	Description	Value
Device Type	High-Speed CMOS EEPROM	16K x 8 (131,072 bits)
Package	SOP-8
Operating Voltage	Supply voltage range	2.5V to 5.5V
Standby Current	Power supply current in standby mode	1 渭A (max)
Active Current	Power supply current during read/write operations	3 mA (max)
Access Time	Typical access time for read/write operations	70 ns (max)
Write Cycle Time	Time required to complete a write cycle	5 ms (max)
Endurance	Number of write/erase cycles per cell	1,000,000 cycles
Data Retention	Duration data can be retained without power	10 years
Temperature Range	Operating and storage temperature range	-40掳C to +85掳C
Organization	Memory organization	2,048 x 8

Instructions:

1. Power Supply: Ensure the supply voltage is within the specified range (2.5V to 5.5V) to avoid damage to the device.
2. Initialization: Before performing any read or write operations, ensure the device is properly initialized according to the datasheet specifications.
3. Write Operations: A write cycle must not exceed 5ms to prevent data corruption. Wait until the previous write operation is complete before starting a new one.
4. Standby Mode: To minimize power consumption, use the standby mode when the device is not actively being used.
5. Temperature Considerations: Operate and store the device within the specified temperature range (-40掳C to +85掳C) to maintain optimal performance and reliability.
6. Endurance and Data Retention: Be aware of the endurance limits (1,000,000 write/erase cycles) and data retention period (10 years) to plan for long-term usage and data integrity.

(For reference only)