Details

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BUY 2SK363 https://www.utsource.net/itm/p/12611456.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-to-Source Voltage	VDS	-	-	500	V
Gate-to-Source Voltage	VGS	-15	-	15	V
Continuous Drain Current	ID	-	-	8	A
Pulse Drain Current	IDP	-	-	16	A
Transconductance	gm	4	-	10	S
Input Capacitance	Ciss	-	1100	-	pF
Output Capacitance	Coss	-	250	-	pF
Reverse Transfer Capacitance	Crss	-	250	-	pF
Power Dissipation	PD	-	-	100	W
Junction Temperature	Tj	-55	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SK363 with care to avoid damage to the leads and the die.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure that the mounting surface is clean and flat.
   • Apply thermal paste or a thermal pad between the device and the heat sink for optimal heat dissipation.
   • Secure the device firmly to the heat sink using appropriate mounting hardware.

3. Biasing:

   • Apply the gate-to-source voltage (VGS) within the specified range to control the drain current (ID).
   • Ensure that the drain-to-source voltage (VDS) does not exceed the maximum rating to prevent breakdown.

4. Operating Conditions:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the power dissipation (PD) to avoid overheating and potential damage.

5. Testing:

   • Use a suitable test setup to verify the device parameters such as transconductance (gm), input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against static discharge and physical damage.

(For reference only)