Details

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BUY 2SC3457 https://www.utsource.net/itm/p/12611464.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	40	V
Collector-Base Voltage	VCBO	-	-	60	V
Emitter-Base Voltage	VEBO	-1.5	-	5	V
Collector Current	IC	-	-	3	A
Base Current	IB	-	-	0.3	A
DC Current Gain	hFE	20	100	400	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	300	-	MHz	IC = 150mA, VCE = 10V
Power Dissipation	PD	-	-	625	mW	Tc = 25掳C
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: The 2SC3457 is sensitive to electrostatic discharge (ESD). Handle with care and use proper anti-static measures.
2. Mounting: Ensure the transistor is mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within specified limits.
3. Biasing: Carefully set the base current (IB) to achieve the desired collector current (IC) while ensuring hFE variations are accounted for in design.
4. Operating Conditions: Do not exceed the maximum ratings listed in the table. Pay special attention to VCEO, VCBO, and VEBO to prevent breakdown.
5. Storage: Store in a cool, dry place away from direct sunlight and sources of heat when not in use.
6. Testing: When testing the device, ensure all voltages and currents are within safe operating areas to avoid damage.

(For reference only)