Details

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BUY A623308M-70SF https://www.utsource.net/itm/p/12611482.html

Parameter	Value
Part Number	A623308M-70SF
Description	N-Channel Enhancement Mode Power MOSFET
Package Type	TO-220
Drain Source Voltage (Vds)	80V
Continuous Drain Current (Id)	70A (at Tc=25掳C)
Peak Pulse Drain Current (Idm)	140A (t=10ms, Rth(j-c)=0.9掳C/W)
Gate Source Voltage (Vgs(th))	卤10V
On-State Resistance (Rds(on))	3.0m惟 (at Vgs=10V, Id=70A)
Total Power Dissipation (Ptot)	160W (Tc=25掳C)
Junction Temperature (Tj)	-55掳C to +150掳C
Storage Temperature (Tstg)	-55掳C to +150掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure the device is mounted on a suitable heatsink to maintain operating temperatures within specified limits.
   • Handle with care to avoid damage to the leads or body.

2. Electrical Connections:

   • Connect the drain terminal to the high-side circuitry.
   • Connect the source terminal to the low-side or ground.
   • Apply gate voltage carefully within the specified range to prevent damage.

3. Thermal Management:

   • Monitor junction temperature to ensure it does not exceed the maximum allowable limit of 150掳C.
   • Use thermal compound between the device and heatsink for optimal heat transfer.

4. Operating Conditions:

   • Operate within the specified voltage and current ratings to avoid overstress conditions.
   • Ensure that the gate-source voltage does not exceed the absolute maximum rating.

5. Storage:

   • Store in a dry environment and protect from electrostatic discharge (ESD).

6. Safety Precautions:

   • Follow all safety guidelines when handling high-power devices.
   • Ensure proper ventilation if using in enclosed spaces.

(For reference only)