Details

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BUY 2SC4834 https://www.utsource.net/itm/p/12611486.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	-	60	-	V
Collector-Base Voltage	VCBO	-	75	-	V
Emitter-Base Voltage	VEBO	-	6	-	V
Collector Current	IC	-	1.5	-	A
Base Current	IB	-	0.15	-	A
DC Current Gain	hFE	30	100	300	-
Transition Frequency	fT	-	100	-	MHz
Power Dissipation	PT	-	15	-	W
Junction Temperature	TJ	-	25	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking if operating at high power levels.
   • Use insulated mounting hardware to avoid short circuits.

2. Biasing:

   • Ensure that the base current (I_B) is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
   • Use appropriate biasing resistors to stabilize the operating point.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to avoid damage to the device.
   • Operate within the recommended temperature range to ensure reliable performance.

4. Handling:

   • Handle with care to avoid mechanical stress on the leads.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

5. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor.
   • Test the transistor under controlled conditions to avoid overloading it during testing.

6. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep away from direct sunlight and sources of heat.

(For reference only)