Details

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BUY 2SK738 https://www.utsource.net/itm/p/12611532.html

Parameter	Symbol	Value	Unit
Drain-to-Source Voltage	Vds	500	V
Gate-to-Source Voltage	Vgs	卤20	V
Continuous Drain Current	Id	12	A
Pulse Drain Current	Idp	36	A
Transconductance	Gfs	4000	mS
Input Capacitance	Ciss	2300	pF
Output Capacitance	Co ss	90	pF
Reverse Transfer Capacitance	Crss	150	pF
Junction Temperature	Tj	-55 to +150	掳C
Storage Temperature	Tstg	-55 to +150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage junction temperature.
   • Use recommended mounting torque for screws to avoid damage.

2. Biasing:

   • Apply gate-to-source voltage (Vgs) within the specified range to control the drain current (Id).
   • Avoid exceeding the maximum gate-to-source voltage to prevent gate oxide breakdown.

3. Operation:

   • Do not exceed the maximum drain-to-source voltage (Vds) to prevent avalanche breakdown.
   • Ensure continuous drain current (Id) does not exceed the rated value to avoid overheating.
   • For pulse operation, ensure pulse drain current (Idp) is within limits to prevent thermal stress.

4. Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads and body.

5. Testing:

   • Use appropriate test equipment and procedures to avoid damaging the device.
   • Measure parameters at specified conditions to ensure accurate readings.

6. Safety:

   • Always follow safety guidelines when handling high-voltage and high-current circuits.
   • Use protective equipment such as gloves and goggles when necessary.

(For reference only)