2SB1019-Y

2SB1019-Y


Specifications
SKU
12611567
Details

BUY 2SB1019-Y https://www.utsource.net/itm/p/12611567.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCE - - 50 V -
Emitter-Base Voltage VEB - - 5 V -
Collector Current IC - 150 - mA VCE = 5V, hFE = 50
Base Current IB - 3 - mA VCE = 5V, IC = 150mA
DC Current Gain hFE 20 50 150 - IC = 150mA, VCE = 5V
Power Dissipation PT - - 625 mW TA = 25掳C
Junction Temperature TJ - - 150 掳C -
Storage Temperature TSTG -55 - 150 掳C -

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SB1019-Y with care to avoid static damage.
    • Use proper anti-static wrist straps and mats when handling.
  2. Mounting:

    • Ensure that the mounting surface is clean and free from contaminants.
    • Apply thermal paste if necessary to improve heat dissipation.
    • Secure the transistor firmly but avoid excessive torque on the leads to prevent mechanical stress.
  3. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) according to the circuit diagram.
    • Ensure correct polarity to avoid damage.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified temperature range to ensure reliable performance.
  5. Testing:

    • Use a multimeter to check for continuity and correct resistance values between the pins.
    • Test the transistor in a controlled environment before integrating it into the final circuit.
  6. Storage:

    • Store the 2SB1019-Y in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the components in their original packaging until ready for use.
(For reference only)

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