Details

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BUY 2SA1112-Q https://www.utsource.net/itm/p/12611578.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	45	V	IC = 0, TA = 25掳C
Emitter-Collector Voltage	VECS	-	-	45	V	IC = 0, TA = 25掳C
Base-Emitter Voltage	VBE	-	-	6.0	V	IC = 100 mA, TA = 25掳C
Base-Emitter Saturation Voltage	VBE(sat)	0.7	-	1.2	V	IC = 150 mA, IB = 15 mA, TA = 25掳C
Collector-Emitter Saturation Voltage	VCE(sat)	0.3	-	1.0	V	IC = 150 mA, IB = 15 mA, TA = 25掳C
Collector Current	IC	-	-	150	mA	VCE = 5 V, TA = 25掳C
Base Current	IB	-	-	15	mA	VCE = 5 V, TA = 25掳C
Power Dissipation	PT	-	-	625	mW	TC = 25掳C
Operating Temperature Range	TA	-55	-	150	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling:

   • Handle with care to avoid static damage.
   • Use appropriate ESD (Electrostatic Discharge) protection measures.

2. Mounting:

   • Ensure proper alignment of the transistor leads during soldering.
   • Avoid excessive heat during soldering; use a temperature-controlled soldering iron.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure adequate heat dissipation if operating near the maximum power dissipation.

4. Testing:

   • Test the transistor under specified conditions to ensure it meets the required performance parameters.
   • Use a multimeter or transistor tester to check the continuity and voltage levels.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and moisture.
   • Follow recommended storage temperature ranges to prevent damage.

6. Applications:

   • Suitable for general-purpose switching and amplification applications.
   • Can be used in circuits requiring moderate current and voltage handling capabilities.

(For reference only)