Details

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BUY MTP3055V https://www.utsource.net/itm/p/12611613.html

Parameter	Description	Value
Part Number	Full part number	MTP3055V
Type	Type of device	N-Channel Enhancement Mode MOSFET
VDS (Max)	Drain-to-source voltage	55 V
RDS(on) @ VGS=10V	On-resistance at gate-source voltage of 10V	5.5 m惟
ID (Continuous)	Continuous drain current	30 A
Power Dissipation	Maximum power dissipation	240 W
Junction Temperature	Maximum junction temperature	175 掳C
Package	Package type	TO-220

Instructions for Use:

1. Mounting: Ensure the MTP3055V is mounted on a heatsink to dissipate heat effectively, especially under high current conditions.
2. Gate Drive: Apply a gate voltage of at least 10V to fully turn on the MOSFET and minimize RDS(on).
3. Storage: Store in a dry place away from direct sunlight and extreme temperatures.
4. Handling: Handle with care to avoid damage to the leads or body. Follow ESD (Electrostatic Discharge) precautions.
5. Application: Suitable for switching applications in power supplies, motor control, and battery management systems.

(For reference only)