Details

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BUY HN58C256AP-10 https://www.utsource.net/itm/p/12611629.html

Parameter	Description	Value
Device Type	CMOS Low Power Static RAM	256K x 8
Package Type	SOP (Small Outline Package)	28-Pin
Supply Voltage Range	Operating voltage range	2.7V to 3.6V
Standby Current	Current consumption in standby mode	1 渭A max
Active Current	Current consumption during active operation	50 mA max
Access Time	Time required for read/write operations	10 ns max
Data Retention Time	Duration data is retained without power	10 years min
Operating Temperature	Temperature range for reliable operation	-40掳C to +85掳C
Storage Temperature	Temperature range for storage	-55掳C to +125掳C
Write Cycle Time	Minimum time between write operations	15 ns max
Organization	Internal memory organization	32K x 8

Instructions:

1. Power Supply Connection: Connect the VCC pin to a stable power supply within the specified voltage range (2.7V to 3.6V). Ensure the GND pin is properly grounded.
2. Signal Integrity: Maintain clean signal lines for address, data, and control signals to avoid data corruption.
3. Operating Environment: Operate within the specified temperature range (-40掳C to +85掳C) to ensure reliable performance.
4. Handling Precautions: Handle with care to prevent electrostatic discharge (ESD) damage; use appropriate ESD protection measures.
5. Write Operations: Ensure sufficient time between write cycles as per the write cycle time specification (15 ns max).
6. Standby Mode: To minimize power consumption, put the device into standby mode when not in use.
7. Storage Conditions: When storing, keep within the storage temperature range (-55掳C to +125掳C) and avoid exposure to excessive humidity or corrosive environments.
8. Installation: Install the device on a suitable PCB with proper thermal management considerations if operating near the upper temperature limit.

(For reference only)