Details

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BUY FQAF12P20 https://www.utsource.net/itm/p/12611667.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	V_DS	-	-	200	V
Gate-Source Voltage	V_GS	-10	-	10	V
Continuous Drain Current	I_D	-	12	-	A	@ T_C = 25掳C
Pulse Drain Current	I_DM	-	60	-	A	@ T_C = 25掳C, t = 10 ms, Duty Cycle 1%
Power Dissipation	P_TOT	-	-	180	W	@ T_C = 25掳C
Junction Temperature	T_J	-	-	175	掳C
Storage Temperature	T_STG	-55	-	150	掳C

Instructions:

1. Handling and Storage:

   • Store the device in a dry, cool place.
   • Handle with care to avoid static discharge which can damage the device.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use a thermal compound between the device and the heat sink for better thermal conductivity.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Operate the device within the recommended operating conditions to ensure reliability and longevity.

4. Testing:

   • When testing, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury.

5. Gate Drive:

   • Apply the gate voltage within the specified range to avoid damage to the gate oxide.
   • Ensure the gate drive circuitry is capable of providing sufficient current to switch the device on and off quickly.

6. Derating:

   • Derate the continuous drain current and power dissipation as the ambient temperature increases to stay within safe operating limits.

7. Surge Current:

   • The pulse drain current rating is for short durations and low duty cycles. Ensure that the surge current does not exceed the maximum rating for extended periods.

8. Electrostatic Discharge (ESD) Protection:

   • Use ESD protective measures when handling the device to prevent damage from static electricity.

9. Warranty:

   • Follow all guidelines and specifications to maintain the warranty of the device. Any misuse or operation outside the specified parameters may void the warranty.

(For reference only)