STK392-560

STK392-560


Specifications
Details

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Parameter Value Unit
Part Number STK392-560 -
Type Power Transistor -
Configuration NPN -
Collector-Emitter Voltage (VCEO) 800 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 12 A
Power Dissipation (PD) 125 W
Junction Temperature (TJ) -55 to +150 掳C
Storage Temperature (TSTG) -55 to +150 掳C
Package TO-247 -

Instructions for Use:

  1. Mounting: Ensure the device is mounted on a suitable heatsink to manage the heat dissipation effectively, especially when operating near maximum power ratings.
  2. Electrical Connections: Connect the collector, base, and emitter leads correctly as per the circuit diagram. Pay attention to polarity to avoid damage.
  3. Biasing: Proper biasing of the base-emitter junction is critical for optimal performance and to prevent thermal runaway.
  4. Protection: Incorporate appropriate protection circuits such as freewheeling diodes if used in switching applications to protect against voltage spikes.
  5. Operating Conditions: Do not exceed the maximum ratings specified in the table. Ensure that the ambient temperature and cooling conditions are adequate to keep the junction temperature within safe limits.
  6. Handling: Handle with care to avoid mechanical damage. Follow anti-static precautions to prevent damage from electrostatic discharge.
(For reference only)

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