FX50SMJ-06

FX50SMJ-06


Specifications
SKU
12611699
Details

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Parameter Value
Part Number FX50SMJ-06
Type MOSFET
Package TO-220
Polarity N-Channel
Vds (Drain-Source Voltage) 60V
Vgs (Gate-Source Voltage) 卤20V
Id (Continuous Drain Current) 50A
Rds(on) (On-State Resistance) 4.5m惟 @ Vgs = 10V
Power Dissipation (Ptot) 180W @ Tc = 25掳C
Operating Temperature Range -55掳C to +150掳C
Storage Temperature Range -65掳C to +175掳C
Thermal Resistance (Rth(j-c)) 0.8掳C/W

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid damage.
    • Use ESD (Electrostatic Discharge) protection when handling the MOSFET to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Use a thermal compound between the MOSFET and the heatsink to improve thermal conductivity.
  3. Soldering:

    • Preheat the PCB to reduce thermal shock.
    • Use a soldering iron with a temperature of 300掳C to 350掳C.
    • Solder each pin for no more than 3 seconds to avoid overheating the device.
  4. Biasing:

    • Apply the gate voltage carefully to avoid exceeding the maximum Vgs rating.
    • Use a gate resistor to limit current and prevent oscillations.
  5. Testing:

    • Test the device in a controlled environment to ensure it meets the required specifications.
    • Monitor the temperature and current during operation to ensure safe operation.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to protect against moisture and static.
  7. Disposal:

    • Dispose of the device according to local environmental regulations.
(For reference only)

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