IPB107N20N3

IPB107N20N3


Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage V CES 200 V Maximum collector-emitter voltage
Emitter-Base Voltage V EBS 7 V Maximum emitter-base voltage
Collector Current I C 10 A Continuous collector current
Power Dissipation P T 150 W Total power dissipation
Junction Temperature T J -55 150 掳C Operating junction temperature range
Storage Temperature T STG -55 150 掳C Storage temperature range
Transition Frequency f T 1.3 MHz Transition frequency

Instructions for Use:

  1. Handling Precautions: Ensure that the device is handled with care to avoid damage from electrostatic discharge (ESD). Use proper anti-static measures.
  2. Mounting: Mount the device in a way that ensures good thermal contact if operating at high currents or power levels. Consider using heatsinks as necessary.
  3. Operating Conditions: Operate within specified voltage and current limits to prevent damage. Pay special attention to the junction temperature, which should not exceed 150掳C.
  4. Storage: Store in a dry, cool place within the temperature range specified to ensure longevity.
  5. Testing: Before installation, test the device under controlled conditions to ensure it meets the required specifications.

Note: Always refer to the latest datasheet provided by the manufacturer for the most accurate and detailed information.

(For reference only)

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