Details

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BUY STW26NM50N https://www.utsource.net/itm/p/12611746.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDSS			500	V	Maximum drain-source voltage
Gate-Source Voltage	VGS	-10		20	V	Maximum gate-source voltage
Continuous Drain Current	ID		26		A	Continuous drain current at Tc=25掳C
Pulse Drain Current	IDM		140		A	Pulse drain current (t=10渭s)
Power Dissipation	PD			230	W	Maximum power dissipation
Junction Temperature	TJ	-55		175	掳C	Operating junction temperature range
Storage Temperature	TSTG	-55		175	掳C	Storage temperature range

Instructions for Use:

1. Handling Precautions:

   • Ensure that the device is handled with care to avoid damage from electrostatic discharge (ESD).
   • Use appropriate ESD protection measures such as wrist straps and conductive packaging.

2. Mounting:

   • Mount the device on a suitable heatsink if operating at high currents or power levels to ensure proper heat dissipation.
   • Follow recommended PCB layout guidelines to minimize inductance and improve thermal performance.

3. Biasing:

   • Apply gate-source voltage (VGS) within the specified limits to prevent gate oxide damage.
   • Ensure that the drain-source voltage (VDS) does not exceed the maximum rated voltage.

4. Operation:

   • Operate within the continuous and pulse current ratings to avoid overheating and potential failure.
   • Monitor the junction temperature (TJ) to ensure it stays within the operational range.

5. Storage:

   • Store in a dry, cool environment within the specified storage temperature range to maintain reliability.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)