Details
BUY DGD21904MS14-13 https://www.utsource.net/itm/p/12611751.html
| Parameter | Description |
|---|---|
| Part Number | DGD21904MS14-13 |
| Type | MOSFET - Metal-Oxide-Semiconductor Field-Effect Transistor |
| Configuration | Dual N-Channel |
| Package | SOIC-8 (Small Outline Integrated Circuit) |
| Operating Temperature | -55掳C to +150掳C |
| Drain-Source Voltage (Vds) | 60V |
| Gate-Source Voltage (Vgs) | 卤20V |
| Continuous Drain Current (Id) | 4.5A at 25掳C, 2.7A at 70掳C |
| Rds(on) | 12m惟 at Vgs=10V |
| Gate Charge (Qg) | 18nC |
| Power Dissipation (Ptot) | 1.1W (derated linearly above 25掳C) |
| Storage Temperature | -65掳C to +150掳C |
Instructions:
- Handling Precautions: Handle with care to avoid damage to the component. Use appropriate anti-static measures.
- Mounting: Ensure proper mounting on a PCB with adequate thermal management if operating near maximum temperature or power ratings.
- Electrical Connections: Connect gate, source, and drain according to circuit design specifications. Verify polarity and connections before applying power.
- Testing: Test the device within specified limits to ensure reliable operation. Avoid exceeding maximum voltage and current ratings.
- Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
- Soldering: Follow manufacturer guidelines for soldering temperature and duration to prevent damage to the component.
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