Details
BUY 2SK2313 https://www.utsource.net/itm/p/12611762.html
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | V(DS) | 450 | V |
| Gate-to-Source Voltage | V(GS) | 卤20 | V |
| Continuous Drain Current | I(D) | 10 | A |
| Pulse Drain Current | I(DM) | 20 | A |
| Power Dissipation | P(TOT) | 120 | W |
| Junction Temperature | T(J) | -55 to +150 | 掳C |
| Storage Temperature | T(STG) | -55 to +150 | 掳C |
Instructions for Use:
Handling Precautions:
- Avoid exposing the device to temperatures outside the specified range.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure good thermal contact between the device and the heat sink.
- Use a suitable thermal compound to enhance heat dissipation.
Biasing:
- Apply the gate-to-source voltage (V(GS)) carefully to avoid exceeding the maximum ratings.
- Ensure that the drain-to-source voltage (V(DS)) does not exceed 450V.
Operation:
- Operate the device within its continuous and pulse current ratings to prevent overheating and damage.
- Monitor the junction temperature (T(J)) to ensure it remains within the safe operating range.
Storage:
- Store the device in a dry, cool place away from direct sunlight and extreme temperatures.
Testing:
- Use appropriate test equipment and follow safety guidelines to avoid damaging the device during testing.
Soldering:
- Solder the device quickly to avoid excessive heat buildup, which can damage the internal structure.
- Follow the recommended soldering profile provided by the manufacturer.
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