Details

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BUY Q6040K7 https://www.utsource.net/itm/p/12611779.html

Parameter	Description	Value
Part Number	Component Identifier	Q6040K7
Type	Device Type	MOSFET
Package	Housing Type	TO-220
VDS (V)	Drain-to-Source Voltage	60V
RDS(on) (惟)	On-State Resistance	40m惟
ID (A)	Continuous Drain Current	40A
PD (W)	Power Dissipation	150W
TJ (掳C)	Junction Temperature Range	-55 to 150
VGS(th) (V)	Gate Threshold Voltage	2.1V to 4V
Qg (nC)	Total Gate Charge	70nC
Input Capacitance (pF)	Input Capacitance at VGS = 0V	1300pF

Instructions for Use:

1. Handling: Handle the Q6040K7 with care to avoid damage to the leads and body. Use appropriate ESD protection.
2. Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation to maintain junction temperature within limits.
3. Soldering: Preheat components and PCB to reduce thermal shock. Soldering temperature should not exceed 260掳C for more than 10 seconds per joint.
4. Storage: Store in a dry, cool place away from direct sunlight.
5. Operation: Do not exceed the maximum ratings listed in the table. Ensure adequate cooling when operating at high currents or power levels.
6. Testing: Before use, verify the device parameters using an appropriate test setup to ensure it meets specifications.

(For reference only)